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參數(shù)資料
| 型號： | 2SA673A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(小信號晶體管) |
| 中文描述： | 硅外延進步黨（小信號晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SA673A |
2SA673, 2SA673A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA673
2SA673A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–35
–50
V
Collector to emitter voltage
–35
–50
V
Emitter to base voltage
–4
–4
V
Collector current
–500
–500
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA673
2SA673A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–35
—
—
–50
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–35
—
—
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–4
—
—
–4
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
—
—
–0.5
—
—
–0.5
μ
A
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA,
I
B
= –15 mA*
2
V
CE
= –3 V,
I
C
= –10 mA
V
CE
= –3 V,
I
C
= –500 mA*
2
V
CE
= –3 V,
I
C
=–10 mA
Collector to emitter
saturation voltage
—
–0.2
–0.6
—
–0.2
–0.6
V
DC current trnsfer ratio
h
FE
*
1
60
—
320
60
—
320
DC current trnsfer ratio
h
FE
10
—
—
10
—
—
Base to emitter voltage
V
BE
—
–0.64 —
—
–0.64 —
V
Notes: 1. The 2SA673 and 2SA673A are grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA673A(K) | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA673-AB | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA673ABTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA673AC | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA673AC(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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