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參數(shù)資料
| 型號： | 2SA743A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進步黨（外延進步黨晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SA743A |
2SA743, 2SA743A
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Ratings
Item
Symbol
2SA743
2SA743A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
1
Tj
–50
–80
V
Collector to emitter voltage
–50
–80
V
Emitter to base voltage
–4
–4
V
Collector current
–1
–1
A
Collector power dissipation
0.75
0.75
W
8
8
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
2SA743
2SA743A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–50
—
—
–80
—
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
—
–80
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–4
—
—
–4
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CER
—
—
–20
—
—
—
μ
A
V
CE
= –50 V, R
BE
= 1
k
I
CER
—
—
—
—
—
–20
V
CE
= –80 V, R
BE
= 1
k
DC current transfer ratio h
FE
*
1
60
120
200
60
120
200
V
= –4 V, I
C
= –50
mA
h
FE
20
—
—
20
—
—
V
= –4 V, I
C
= –1 A
(pulse)
Base to emitter voltage
V
BE
—
–0.65 –1.0
—
–0.65 1.0
V
V
= –4 V, I
C
= –50
mA
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.75 –1.5
—
–0.75 –1.5
V
I
C
= –1 A, I
B
= –0.1 A
Gain bandwidth product f
T
—
120
—
—
120
—
MHz
V
= –4 V, I
C
= –30
mA
Note:
1. The 2SA743 and 2SA743A is grouped by h
FE
as follows.
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| 2SA770 | SILICON PNP EPITAXIAL PLANAR |
| 2SA771 | SILICON PNP EPITAXIAL PLANAR |
| 2SA778 | Silicon PNP Epitaxial |
| 2SA778A | Silicon PNP Epitaxial |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA743AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA743AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA743B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA743C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA744 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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