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參數(shù)資料
| 型號： | 2SA777 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SA777 |
1
Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1509
I
Features
G
High collector to emitter voltage V
CEO
.
G
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9
±
0.2
2.54
±
0.15
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
3
0.45
+0.2
1.27
1.27
0.45
+0.2
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 100MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–80
–80
–5
90
50
typ
100
– 0.2
– 0.85
120
11
max
– 0.1
220
– 0.4
–1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
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|---|---|
| 2SA778 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92-150V -.05A .2W ECB |
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