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| 型號(hào)： | 2SA778KTZ |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 104K |
| 代理商： | 2SA778KTZ |
2SA778(K), 2SA778A(K)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 2 of 7
Electrical Characteristics
(Ta = 25°C)
2SA778(K)
Typ
–150
2SA778A(K)
Min
Typ
–180
Item
Symbol
V
(BR)CBO
Min
Max
—
Max
—
Unit
V
Test conditions
I
C
= –50
μ
A, I
E
= 0
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
—
—
V
(BR)CER
–150
—
—
–180
—
—
V
I
C
= –50
μ
A,
R
BE
= 30 k
V
CB
= –100 V, I
E
= 0
V
CB
= –150 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –3 V,
I
E
= –15 mA
I
C
= –15 mA,
I
B
= –1 mA
I
C
= –15 mA,
I
B
= –1 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
MHz V
CE
= –3 V,
I
C
= –15 mA
ns
V
CC
= –10.3 V
μ
s
I
C
= 10 I
B1
= –10
I
B2
= –10 mA
μ
s
V
CC
= –10 V,
I
C
=–17 mA
I
B1
= –1mA,
I
B2
= –12 mA
I
CBO
I
EBO
h
FE
—
—
—
30
—
—
—
100
–1.0
—
–1.0
—
—
—
—
40
—
—
—
100
—
–1.0
–1.0
200
μ
A
μ
A
μ
A
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Collector output
capacitance
Gain bandwidth product
V
CE(sat)
—
–0.3
–1.0
—
–0.3
–1.0
V
V
BE(sat)
—
–0.77
–1.0
—
–0.77
–1.0
V
Cob
—
—
10
—
—
10
pF
f
T
—
50
—
—
50
—
Turn on time
Turn off time
t
on
t
off
—
—
135
1.7
—
—
—
—
135
1.7
—
—
Storage time
t
stg
—
—
1.0
—
—
1.0
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