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參數(shù)資料
| 型號(hào)： | 2SA812 |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 中文描述： | 音頻，通用放大器進(jìn)步黨硅外延晶體管微型模具 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 301K |
| 代理商： | 2SA812 |
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SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1984
FEATURES
Complementary to 2SC1623
High DC Current Gain: h
FE
= 200 TYP. (V
CE
=
6.0 V, I
C
=
1.0 mA) )
High Voltage: V
CEO
=
50 V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
60
50
5.0
100
200
150
V
V
V
mA
mW
°
C
°
C
55 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
0.1
μ
A
μ
A
V
CB
=
60 V, I
E
= 0 A
V
EB
=
5.0 V, I
C
= 0 A
V
CE
=
6.0 V, I
C
=
1.0 mA
Note
I
C
=
100 mA, I
B
=
10 mA
V
CE
= 6.0 V, I
C
=
1.0 mA
V
CE
=
6.0 V, I
E
= 10 mA
V
CE
=
10 V, I
E
= 0 A, f = 1.0 MHz
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
90
200
0.18
0.62
600
0.3
0.68
Collector Saturation Voltage
V
CE(sat)
V
Base to Emitter Voltage
V
BE
0.58
V
Gain Bandwidth Product
f
T
180
MHz
Output Capacitance
C
ob
4.5
pF
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M4
h
FE
90 to 180
M5
M6
M7
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING
(Unit: mm)
2.8 ±0.2
1.5 TYP.
0.65
+0.1
0
+
–
0
T
0
T
2
0
+
–
0
T
1
Marking
0
+
–
.
1. Emitter
2. Base
3. Collector
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA812_0712 | 制造商:BILIN 制造商全稱(chēng):Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SA812-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, TRANSISTOR, PNP |
| 2SA812K | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:PNP Epitaxial Planar Transistor |
| 2SA812L | 制造商:NEC 功能描述:* |
| 2SA812M4 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-346 |
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