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參數(shù)資料
| 型號(hào)： | 2SA812P |
| 廠(chǎng)商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 2SA812P |
2SA812
PNP Silicon
Epitaxial Transistors
Features
High DC Current Gain:90
hFE
600.(VCE=-6.0V, IC=-1mA)
High voltage: VCEO=-50V
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-50
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-100
mA
PC
Collector power dissipation
200
mW
TJ
Junction Temperature
-55 to +150
T
Storage Temperature
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=-60Vdc,IE=0)
---
-0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0)
---
-0.1
uAdc
ON CHARACTERISTICS
hF
DC Current Gain*
(IC=-1.0mAdc, VCE=-6.0Vdc)
90
---
600
---
VCE(sat)
Collector Saturation Voltage*
(IC=-100mAdc, IB=-10mAdc)
---
-0.3
Vdc
VBE
Base Emitter Voltage*
(VCE=-6.0Vdc, IC=-1.0mAdc)
---
-0.68
Vdc
fT
Gain Bandwidth product
(VCE=-6.0Vdc, IE=-10mAdc)
180
---
MHz
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 3
2008/01/01
TM
Micro Commercial Components
E
B
C
CLASSIFICATION OF hFE
Marking
Range
M4
M5
M6
M7
90-180
135-270
300-600
200-400
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 2
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| 2SA812M6 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA812-T1B | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SA812-T1B-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA812-T1B-A(M6) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA812-T1B-A(M7) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA812-T1B-A-M4 | 制造商:Renesas Electronics 功能描述:PNP |
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