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參數(shù)資料
| 型號(hào)： | 2SA836 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 183K |
| 代理商： | 2SA836 |
2SA836
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–55
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
–55
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–100
nA
VCB = –18 V, IE = 0
Emitter cutoff current
IEBO
—
–50
nA
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
1
160
—
500
VCE = –12 V, IC = –2 mA
Collector to emitter saturation voltage
VCE(sat)
—
–0.1
–0.5
V
IC = –10 mA, IB = –1 mA
Base to emitter voltage
VBE
—
–0.66
–0.75
V
VCE = –12 V, IC = –2 mA
Gain bandwidth product
fT
—
200
—
MHz
VCE = –12 V, IE = –2 mA
Collector output capacitance
Cob
—
2.0
—
pF
VCB = –10 V, IE = 0, f = 1MHz
Noise figure
NF
—
1
5
dB
VCE = –6 V,
f = 10 Hz
—
0.5
1
dB
IC = –0.1mA,
Rg = 10 k
f = 1 kHz
Note:
1. The 2SA836 is grouped by hFE as follows.
C
D
160 to 320
250 to 500
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA844-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA844 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA844-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA844-C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA844CTZ | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA836C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA836CTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA836D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA836DTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA837 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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