參數(shù)資料
型號(hào)： 2SA844-E
元件分類(lèi)： 小信號(hào)晶體管
英文描述： SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 22K
代理商： 2SA844-E
2SA844
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–100
nA
V
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
—
–50
nA
V
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
160
—
800
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.1
–0.5
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
—
–0.66
–0.75
V
CE = –12 V, IC = –2 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = –12 V, IE = –2 mA
Collector output capacitance
Cob
—
2.0
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SA844 is grouped by h
FE as follows.
CD
E
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
相關(guān)PDF資料
PDF描述
2SA844 SMALL SIGNAL TRANSISTOR, TO-92
2SA844-D SMALL SIGNAL TRANSISTOR, TO-92
2SA844-C SMALL SIGNAL TRANSISTOR, TO-92
2SA844CTZ 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA844D 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA847 制造商:Distributed By MCM 功能描述:SUB ONLY MITSUBISHI TRANS. TO- -90V -.05A .2W BCE
2SA854 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:Medium Power Transistor (-32V, -0.5A)
2SA854S 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:Medium Power Transistor (-32V, -0.5A)
2SA854STPQ 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA854STPR 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*