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參數(shù)資料
| 型號： | 2SA872 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92(1), 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 51K |
| 代理商： | 2SA872 |
2SA872, 2SA872A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA872
2SA872A
Unit
Collector to base voltage
V
CBO
–90
–120
V
Collector to emitter voltage
V
CEO
–90
–120
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA872
2SA872A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
–120
—
V
I
C = –1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
–0.5
—
AV
CB = –75 V, IE = 0
—
–0.5
AV
CE = –100 V, IE = 0
DC current tarnsfer ratio h
FE1*
1
250
—
800
250
—
800
V
CE = –12 V,
I
C = –2 mA
h
FE2
160
—
160
—
V
CE = –12 V,
I
C = –0.1 mA
Base to emitter voltage
V
BE
—
–0.75 —
—
–0.75 V
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.5
—
–0.5
V
I
C = –10 mA,
I
B = –1 mA
Gain bandwidth product f
T
—
120
—
120
—
MHz
V
CE = –12 V,
I
C = –2 mA
Collector output
capacitance
Cob
—
1.8
—
1.8
—
pF
V
CB = –25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
5.0
—
5.0
dB
V
CE = –6 V,
I
C = –50 A
R
g = 50 k
f = 10 Hz
—
1.5
—
1.5
dB
f = 1 kHz
Note:
1. The 2SA872/A is grouped by h
FE1 as follows.
DE
250 to 500
400 to 800
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA872A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-120V -.05A -.3W ECB |
| 2SA872AD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA872-AD | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA872ADTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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