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參數(shù)資料
| 型號： | 2SA879Q |
| 英文描述： | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51 |
| 中文描述： | 晶體管|晶體管|進步黨| 200伏五（巴西）總裁|提供70mA一（c）|律師- 51 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 2SA879Q |
2SA0838
2
SJC00005BED
hFE IC
Cob VCB
Cre VCE
PC Ta
IC VCE
VCE(sat) IC
fT IE
GP IC
NF
I
E
0
200
160
40
120
80
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
0
10
8
2
6
4
0
30
25
20
15
10
5
Ta
= 25°C
IB
= 250 A
200 A
150 A
100 A
50 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
6
5
4
3
2
1
f
= 1 MHz
IE
= 0
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
1
10
100
0
5
4
3
2
1
IC
= 1 mA
f
= 10.7 MHz
Ta
= 25°C
Collector-emitter voltage V
CE (V)
Common-emitter
reverse
transfer
capacitance
C
re
(pF
)
0.1
1
10
100
0
600
500
400
300
200
100
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
100
0
24
20
16
12
8
4
VCE
= 10 V
f
= 100 MHz
Ta
= 25°C
Power
gain
G
P
(dB
)
Collector current I
C (mA)
0.1
1
10
0
5
4
3
2
1
VCB
= 10 V
f
= 100 MHz
Ta
= 25°C
Noise
figure
NF
(dB
)
Emitter current I
E (mA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA879R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51 |
| 2SA879-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA880 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SI PNP EPITAXIAL PLANAR |
| 2SA881 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA882 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon PNP Power Transistors |
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