參數(shù)資料
型號: 2SA928AL-Q-T92-B
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 2000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 2/4頁
文件大小: 167K
代理商: 2SA928AL-Q-T92-B
2SA928A
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R211-009.D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Dissipation
PC
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC =-100μA, IE =0
-30
V
Collector-Emitter Breakdown Voltage
BVCEO IC =-1mA, IB =0
-30
V
Emitter-Base Breakdown Voltage
BVEBO IE =-1mA, IC =0
-5
V
Collect Cut-off Current
ICBO
VCB =-30V, IE =0
-100
nA
Emitter Cut-off Current
IEBO
VBE =-5V, IC =0
-100
nA
DC Current Ratio
hFE
VCE =-2V, IC =-500mA
100
320
Base-Emitter on Voltage
VBE(ON) VCE =-2V, IC =-500mA
-1
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC =-1.5A, IB =-30mA
-2
V
Output Capacitance
COB
VCB =-10V, IE =0, f =1MHz
48
pF
Current Gain Bandwidth Product
fT
VCE =-2V, IC =-500mA
120
MHZ
CLASSIFICATION OF hFE
RANK
Q
Y
RANGE
100 ~ 200
160 ~ 320
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