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參數(shù)資料
| 型號： | 2SA929F |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 50MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 50mA的一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 278K |
| 代理商： | 2SA929F |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.625W
Collector current
I
CM:
-0.5 A
Collector-base voltage
V
(BR)CBO
: -300V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
A
I
E
=0
-300
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= -1 mA
I
B
=0
-300
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -200 V I
E
=0
-0.25
A
Emitter cut-off current
I
EBO
V
EB
= -5 V
I
C
=0
-0.1
A
h
FE 1
V
CE
= -10 V, IC=- 1 mA
60
h
FE 2
V
CE
= -10V, I
C
= -10 mA
80
250
DC current gain
h
FE 3
V
CE
= -10 V, I
C
= -80 mA
60
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= -20 mA, IB= -2 mA
-0.2
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= -20 mA, IB= -2 mA
-0.9
V
Transition frequency
f
T
V
CE
= -20 V, IC= -10 mA
f =
30MHz
50
MHz
CLASSIFICATION OF h
FE(2)
Rank
A
B
1
B
2
C
Range
80-100
100-150
150-200
200-250
1
2
3
TO
92
1.EMITTER
2.BASE
3.COLLECTOR
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