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參數(shù)資料
| 型號： | 2SA966-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 2SA966-Y |
2SA966
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
Complementary to 2SC2236 and 3-W output applications.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Emitter current
IE
1.5
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
―
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
―
V
DC current gain
hFE
(Note)
VCE = 2 V, IC = 500 mA
100
―
320
Collector-emitter saturation voltage
VCE (sat)
IC = 1.5 A, IB = 0.03 A
―
2.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 500 mA
―
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 500 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
40
―
pF
Note: hFE classification O: 100 to 200, Y: 160 to 320
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA966-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 30V 1.5A 3-Pin TO-92 Mod |
| 2SA967 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30MA I(C) | MICRO-T |
| 2SA968 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA968-0 | 制造商:TT Electronics / Semelab 功能描述:PNP power transistor,2SA968 1.5A |
| 2SA968A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon PNP Power Transistors |
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