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參數(shù)資料
| 型號(hào)： | 2SA970-GR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 629K |
| 代理商： | 2SA970-GR |
2SA970
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Low noise: NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 k, VCE = 6 V, IC = 100 μA,
f = 1 kHz
High DC current gain: hFE = 200~700
High breakdown voltage: VCEO = 120 V
Low pulse noise. Low 1/f noise
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
120
V
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.3
V
Base-emitter voltage
VBE
VCE = 6 V, IC = 2 mA
0.65
V
Transition frequency
fT
VCE = 6 V, IC = 1 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.0
pF
VCE = 6 V, IC = 0.1 mA, f = 10 Hz,
RG = 10 kΩ
6
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
2
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 100 Ω
3
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA970-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
| 2SA971 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SA972 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-30V -.1A .25W ECB |
| 2SA973 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-60V -.05A .4W ECB |
| 2SA979 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL TRANSISTOR |
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