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參數(shù)資料
| 型號(hào)： | 2SB0621 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信號(hào)裝置-小信號(hào)晶體管-一般使用低頻Amplifires |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB0621 |
1
Transistor
2SB0642 (2SB642)
Silicon PNP epitaxial planer type
For low-power general amplification
I Features
G High foward current transfer ratio hFE.
G M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
1.0
±
0.1
1.0
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4.5
±
0.1
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
400
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10
A, I
C = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
typ
80
3.5
max
–1
460
–1
Unit
nA
A
V
MHz
pF
*h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Note.) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB621 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0621A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB621A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0642 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB642 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0621(2SB621) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)トランジスタ － 汎用低周波増幅 |
| 2SB0621/2SB0621A(2SB621/2SB621A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0621. 2SB0621A (2SB621. 2SB621A) - PNP Transistor |
| 2SB06210RA | 功能描述:TRANS PNP 25VCEO 1A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0621A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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