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參數(shù)資料
| 型號： | 2SB0928P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 241K |
| 代理商： | 2SB0928P |
Data Sheet D14004EJ2V0DS00
3
2SK3306
TYPICAL CHARACTERISTICS(TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
Tc - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
020
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
Tc - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
8
6
2
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
Power
Dissipation
Limited
10
ms
R
DS
(on)
Limited
(at
V
GS
=
10
V)
ID (DC)
ID (pulse)
100
s
Tc = 25 C
Single Pulse
PW
=
10
s
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
VGS - Gate to Source Voltage - V
Pulsed
1000
100
0.001
0.01
ID
-
Drain
Current
-
A
50
40
30
20
10
VGS = 20 V
0.1
1
10
510
15
80
100
ms
1ms
4
10 V
8.0 V
VGS = 6.0 V
TA = –25 C
25 C
75 C
125 C
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| 2SB928Q | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0928PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB0928Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB0929 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification |
| 2SB0929(2SB929) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0929/2SB0929A(2SB929/2SB929A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0929. 2SB0929A (2SB929. 2SB929A) - PNP Transistor |
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