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參數(shù)資料
| 型號： | 2SB0942 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Low-Frequency Power Amplification |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 75K |
| 代理商： | 2SB0942 |
Power Transistors
2SB0942
(2SB942)
, 2SB0942A
(2SB942A)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00022BED
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
■
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Large collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0942
V
CBO
60
80
60
80
5
4
8
V
2SB0942A
Collector-emitter voltage
(Base open)
2SB0942
V
CEO
V
2SB0942A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power
P
C
40
W
dissipation
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0942
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB0942A
Base-emitter voltage
V
BE
V
CE
=
4 V, I
C
=
3 A
V
CE
=
60 V, V
BE
=
0
V
CE
=
80 V, V
BE
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
4 A, I
B
=
0.4 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
4 A, I
B1
=
0.4 A, I
B2
=
0.4 A
V
CC
=
50 V
2
400
400
700
1
V
Collector-emitter
cutoff current (E-B short)
2SB0942
I
CES
μ
A
2SB0942A
Collector-emitter cutoff current (Base open)
I
CEO
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
h
FE2
mA
Forward current transfer ratio
40
250
15
Collector-emitter saturation voltage
V
CE(sat)
1.5
V
Transition frequency
f
T
t
on
30
MHz
Turn-on time
0.2
μ
s
μ
s
μ
s
Storage time
t
stg
0.5
Fall time
t
f
0.2
Note) The part numbers in the parenthesis show conventional part number.
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
R
Q
P
h
FE1
40 to 90
70 to 150
120 to 250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0942A | For Low-Frequency Power Amplification |
| 2SB0944 | For Power Switching |
| 2SB0945 | For Power Switching |
| 2SB0946 | For Power Switching |
| 2SB0947 | For Low-Voltage Switcing |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0942(2SB942) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB09420P | 功能描述:TRANS PNP 60VCEO 4A TO-220F RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0942A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Frequency Power Amplification |
| 2SB0942A(2SB942A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
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