- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371486 > 2SB0952 (PANASONIC CORP) For Low-Voltage Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB0952 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | For Low-Voltage Switching |
| 中文描述： | 7 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | 2SB0952 |
Power Transistors
2SB0952
(2SB952)
, 2SB0952A
(2SB952A)
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJD00031AED
For low-voltage switching
■
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
40
50
20
40
5
7
12
30
Unit
Collector-base voltage
(Emitter open)
2SB0952
V
CBO
V
2SB0952A
Collector-emitter voltage
(Base open)
2SB0952
V
CEO
V
2SB0952A
Emitter-base voltage (Collector open)
V
EBO
I
C
I
CP
P
C
V
Collector current
A
Peak collector current
A
Collector power dissipation
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
20
40
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0952
V
CEO
I
C
=
10 mA, I
B
=
0
V
2SB0952A
Collector-base cutoff
current (Emitter open)
2SB0952
I
CBO
V
CB
=
40 V, I
E
=
0
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
2 A
I
C
=
5 A, I
B
=
0.16 A
I
C
=
5 A, I
B
=
0.16 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
50
50
50
μ
A
2SB0952A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
h
FE2 *
V
CE(sat)
V
BE(sat)
f
T
C
ob
μ
A
Forward current transfer ratio
45
60
260
0.6
1.5
Collector-emitter saturation voltage
V
Base-emitter saturation voltage
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
140
MHz
Turn-on time
t
on
t
stg
t
f
I
C
=
2
A
I
B1
=
66 mA, I
B2
=
66 mA
V
CC
=
20 V
0.1
μ
s
μ
s
μ
s
Storage time
0.5
Fall time
0.1
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Note) Self-supported type package is also prepared.
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
h
FE2
R
Q
P
60 to 120
90 to 180
130 to 260
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0952A | For Low-Voltage Switching |
| 2SB0953 | For Low-Voltage Switching |
| 2SB953 | For Low-Voltage Switching |
| 2SB953A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB0953A | For Low-Voltage Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0952(2SB952) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB0952A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Voltage Switching |
| 2SB0952A(2SB952A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。