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參數(shù)資料
| 型號(hào)： | 2SB0976 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | TV 41C 41#20 PIN WALL RECP |
| 中文描述： | 5000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | 2SB0976 |
Transistors
2SB0976
(2SB976)
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJC00064BED
For low-frequency output amplification
For DC-DC converter
For stroboscope
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) The part number in the parenthesis shows conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
h
FE
125 to 205
180 to 625
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
27
18
7
5
8
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power dissipation
0.75
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
V
EBO
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
2 A
I
C
=
3 A, I
B
=
0.1 A
V
CB
=
6 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
18
7
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
I
CBO
100
1
nA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
I
EBO
h
FE
μ
A
125
625
V
CE(sat)
0.4
1.0
V
Transition frequency
f
T
C
ob
120
MHz
Collector output capacitance
(Common base, input open circuited)
60
pF
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
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| 2SB09760RA | 功能描述:TRANS PNP 18VCEO 5A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0976Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 5A I(C) | TO-92 |
| 2SB0976R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 5A I(C) | TO-92 |
| 2SB1000 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-62-25V -1A 1W ECB SURFACE MOUNT |
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