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參數(shù)資料
| 型號： | 2SB1001BH |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SB1001BH |
2SB1001
3
0
50
100
150
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
Pc
(W)
(on
the
alumina
ceramic
board)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics (1)
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
0
–2
–10
–4
–6
–8
–100
–80
–60
–40
–20
IB = 0
–0.05 mA
–0.1
–0.2
–0.3
–0.15
–0.25
–0.35
Typical Output Characteristics (2)
–2.0
–1.6
–1.2
–0.8
–0.4
Collector to Emitter Voltage VCE (V)
0
–0.4
–0.8
–1.2
–1.6
–2.0
Collector
Current
I
C
(A)
IB = 0
–5 mA
–20
–25
–15
–10
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
–1
–3
–10
–30
–100
–300
–1,000
Base to Emitter Voltage VBE (V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –2 V
Pulse
Ta = 75
°C
25
–25
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1001BJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1001BJTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002CH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1002CJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
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