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參數(shù)資料
| 型號(hào)： | 2SB1011 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type |
| 中文描述： | 0.1 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2SB1011 |
2SB1011
2
SJD00036BED
P
C
T
a
I
C
V
CE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
Sefe operation area
0
0
160
40
120
80
0.4
1.2
0.8
1.6
C
C
Ambient temperature T
a
(
°
C)
Without heat sink
0
120
100
80
60
40
20
0
12
2
10
4
8
6
T
C
=25C
–0.1mA
–0.2mA
–0.3mA
–0.9mA
I
B
=–1mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
C
C
Collector-emitter voltage V
CE
(V)
0
0
1.0
0.8
0.6
0.4
0.2
120
100
80
60
40
20
Base-emitter voltage V
BE
(V)
C
C
V
CE
=–5V
T
C
=75C
–25C
25C
0.01
0.1
0.1
1
10
100
1
10
100
C
C
Collector current I
C
(mA)
I
C
/I
B
=10
25C
–25C
T
C
=75C
0
0.1
240
200
160
120
80
40
1
10
100
V
CE
=–5V
Ta=75C
25C
–25C
F
F
Collector current I
C
(mA)
1
10
100
1
000
0
120
100
80
60
40
20
T
T
Emitter current I
E
(mA)
V
CB
=–30V
f=200MHz
T
C
=25C
0
30
25
20
15
10
5
1
10
100
I
E
=0
f=1MHz
T
C
=25C
C
o
Collector-base voltage V
CB
(V)
0.1
1
1
10
100
1
000
10
100
1
000
C
C
Collector-emitter voltage V
CE
(V)
Single pulse
T
C
=25C
t=10ms
t=100ms
t=1s
I
CP
I
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1015 | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1015A | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1016A | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SB1017 | 2SB1017 |
| 2SB1018A | TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1011QRL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1012 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1012(K) | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1012K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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