參數(shù)資料
型號: 2SB1016A
元件分類: 功率晶體管
英文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-10R1A, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 131K
代理商: 2SB1016A
2SB1016A
2006-11-21
3
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (A)
VCE (sat) – IC
Colle
ct
or-em
itter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Ambient temperature Ta (°C)
PC – Ta
Colle
ctor
p
ower
d
issip
atio
n
P
C
(
W
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
25
Tc = 75°C
5
0
Common emitter
VCE = 5 V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1
2
3
4
50
0
Tc = Ta
Infinite heat sink
25
50
75
100
125
150
10
20
30
40
10
0.2
3
VCEO max
1 ms*
IC max (pulsed)*
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
10
30
100
0.5
1
3
5
20
IC max (continuous)
10 ms*
100 ms*
1 s*
DC operation
Tc = 25°C
IB = 20 mA
150
100
50
250
200
5
0
Common emitter
Tc = 25°C
1
2
3
4
5
6
7
1
2
3
4
Tc = 75°C
3
0.03
0.01
0.03
0.1
0.3
1
3 5
0.05
0.1
0.3
0.5
1
25
Common emitter
IC/IB = 10
25
Tc = 75°C
500
10
0.01
0.03
0.1
0.3
1
3 5
100
50
300
30
Common emitter
VCE = 5 V
5
25
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參數(shù)描述
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