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參數(shù)資料
| 型號(hào)： | 2SB1018A-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-10R1A, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 173K |
| 代理商： | 2SB1018A-O |
2SB1018A
2005-02-02
4
Collector-emitter voltage VCE (V)
Safe Operating Area
C
ollect
or
cu
rre
nt
I C
(
A
)
Collector current IC (A)
Ba
se-
emi
tte
rsa
tu
rati
on
v
oltag
e
V
BE
(
sa
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
1
*
: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.3
0.5
1
3
5
10
20
3
10
30
100
10 ms*
IC max (pulsed)*
IC max
(continuous)
1 ms*
100 ms*
DC operation
Tc = 25°C
VCEO max
Common emitter
VCE = 1 V
0
2
4
6
0.8
1.6
2.4
3.2
25
55
Tc = 100°C
0.1
0.03
Common emitter
IC/IB = 10
25
100
Tc = 55°C
0.1
0.3
1
3
10
0.3
0.5
1
3
5
10
VBE (sat) – IC
rth – tw
Pulse width tw (s)
T
ra
ns
ie
nt
t
he
rm
al
r
esi
stanc
e
r th
(°
C
/W
)
0.001
0.01
0.1
1
10
100
1000
0.1
Curves apply only to limited areas of thermal resistance.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
1
10
100
(2)
(1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1020A | 7 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SB1025-DJ | SMALL SIGNAL TRANSISTOR |
| 2SB1025DH | SMALL SIGNAL TRANSISTOR |
| 2SB1025-DK | SMALL SIGNAL TRANSISTOR |
| 2SB1025 | SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1018AY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SB1018A-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, TOSH, TO220, 7A, 80V |
| 2SB1019 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
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