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參數(shù)資料
| 型號： | 2SB1018A-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | 2SB1018A-O |
2SB1018A
2006-11-21
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
5
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
―
V
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
70
―
240
DC current gain
hFE (2)
VCE = 1 V, IC = 4 A
30
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.4 A
―
0.3
0.5
Base-emitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.4 A
―
0.9
1.4
V
Transition frequency
fT
VCE = 4 V, IC = 1 A
―
10
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
250
―
pF
Turn-on time
ton
―
0.4
―
Storage time
tstg
―
2.5
―
Switching time
Fall time
tf
IB1 = IB2 = 0.3 A, duty cycle ≤ 1%
―
0.5
―
μs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
I B1
20 μs
VCC = 30 V
I B2
Output
10
IB1
IB2
Input
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
B1018A
Characteristics
indicator
Part No. (or abbreviation code)
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PDF描述 |
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| 2SB1020A | 7 A, 100 V, PNP, Si, POWER TRANSISTOR |
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| 2SB1026DLUR | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1018AY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SB1018A-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, TOSH, TO220, 7A, 80V |
| 2SB1019 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
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