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參數(shù)資料
| 型號： | 2SB1026DL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SB1026DL |
3
2SA1978
TYPICAL CHARACTERISTICS
0
50
100
200
100
200
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Dissipation
-
mV
TA - Ambient Temperature - C
150
300
400
IC - Collector Current - mA
NF
-
Noise
Figure
-
dB
VCE = 10 V
f = 1 GHZ
NOISE FIGURE VS. COLLECTOR CURRENT
1
0
2
4
6
10
100
–0.01
–1
–0.1
–10
–100
–1000
–0.1
–1.0
–10
–0.01
–1
–0.1
–10
–100
–1000
–0.1
–1.0
–10
COLLECTOR SATURATION AND BASE TO EMITTER
VOLTAGE VS. COLLECTOR CURRENT
IC - Collector Current - mA
V
BE
(ON)
-
DC
Base
Voltage
-
V
CE
(sat)
- Collector
Saturation
Voltage
-
V
BE
(sat)
- Base
Satturation
Voltage
-
V
0
6
14
1
10
100
IC - Collector Current - mA
S
21e
2
-Insertion
Power
Gain
-
dB
INSERTION GAIN vs. COLLECTOR CURRENT
f = 1 GHZ
2
4
8
10
12
0
6
14
1
10
100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f = 1 GHZ
2
4
8
10
12
fT
-
Gain
Bandwidth
Product
-
GH
Z
VCE = –10 V
IC = 10 IB
VCE = –1 V
VCE = –10 V
VCE = –3 V
VCE = –1 V
VCE = –10 V
VCE = –3 V
VCE = –1 V
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
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| 2SB1026DM | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1026DM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1026DMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
| 2SB1027EH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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