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參數(shù)資料
| 型號： | 2SB1026DM |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SB1026DM |
2SA673A(K)
Rev.3.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
–20
–40
–60
–80
–100
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
–8
–6
–4
–2
–10
IB = 0
–0.1 mA
–0.2
–0.4
–0.5
P
C =
400
mW
–0.6
–0.7
–0.8
–0.9
–1.0
–0.3
0
–100
–200
–300
–400
–500
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (2)
–8
–6
–4
–2
–10
IB = 0
–1 mA
–2
–3
–4
–5
–6
–7
PC = 400 mW
0
–0.3
–1.0
–3
–10
–30
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–1.0
–0.8
–0.6
–0.2
–0.4
Ta
=
75
°C
VCE = –3 V
2
5
–25
0
50
100
150
Collector Current IC (mA)
DC
Current
Transfer
ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
–200
–10 –20
–50 –100
–2
–5
–500
VCE = –3 V
75
50
25
0
Ta =
–25
°C
0
40
80
120
160
200
240
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
–200
–100
–10
–20
–50
–5
–500
VCE = –3 V
0
200
400
600
50
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(mW)
Maximum Collector Dissipation Curve
100
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1026DMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
| 2SB1027EH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1027EJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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