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參數(shù)資料
| 型號： | 2SB1027EH |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB1027EH |
2SB1027
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–180
V
Collector to emitter voltage
V
CEO
–120
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–1.5
A
Collector peak current
i
C(peak)*
1
–3
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–180
—
V
I
C = –1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
V
I
C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
——V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
—
–10
AV
CB = –160 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
320
V
CE = –5 V, IC = –0.15 A,
pulse
h
FE2
30
—
V
CE = –5 V, IC = –0.5 A,
pulse
Collector to emitter saturation
voltage
V
CE(sat)
—
–1.0
V
I
C = –0.5 A, IB = –50 mA,
Pulse
Base to emitter voltage
V
BE
—
–0.9
V
CE = –5 V, IC = –0.15 A,
pulse
Note:
1. The 2SB1027 is grouped by h
FE1 as follows.
Mark
EH
EJ
EK
h
FE1
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1027EH | SMALL SIGNAL TRANSISTOR |
| 2SB1028 | SMALL SIGNAL TRANSISTOR |
| 2SB1028EM | SMALL SIGNAL TRANSISTOR |
| 2SB1028-EL | SMALL SIGNAL TRANSISTOR |
| 2SB1028EL | SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1027EJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1027EK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1028 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1028EL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1028EM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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