參數(shù)資料
型號(hào): 2SB1070Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 4 A, 20 V, PNP, Si, POWER TRANSISTOR
封裝: N-G1, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 212K
代理商: 2SB1070Q
2SB1070, 2SB1070A
2
SJD00040AED
VBE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
VCE(sat) IC
ton , tstg , tf IC
Safe operation area
0
10
30
20
40
0
150
25
125
50
100
75
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 50
×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
(1)
(2)
(3)
0
6
5
4
3
2
1
0
10
2
4
8
6
TC=25C
–40mA
–50mA
–45mA
–30mA
–35mA
–20mA
–15mA
–10mA
–25mA
–5mA
IB=–80mA
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0.01
0.1
1
10
100
0.1
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
IC/IB=20
25C
–25C
TC=100C
0.01
0.1
1
10
100
0.1
1
10
IC/IB=20
TC=–25C
100C
25C
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0.1
1
10
100
1000
VCE=–2V
TC=100C
25C
–25C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
0.01
0.1
1
10
0.1
1
10
100
1 000
VCE=–2V
f=10MHz
TC=25C
Transition
frequency
f
T
(MHz
)
Collector current I
C (mA)
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
Non repetitive pulse
TC=25C
t=10ms
t=300ms
t=1ms
ICP
IC
2SB1070A
2SB1070
0.01
10
1
0.1
0
8
2
6
4
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–20V
TC=25C
相關(guān)PDF資料
PDF描述
2SB1070P 4 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB1072S 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1072L 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1073Q 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1073R 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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