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參數(shù)資料
| 型號： | 2SB1071 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 4 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 2SB1071 |
Power Transistors
2SB1071, 2SB1071A
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00041AED
For low-voltage switching
■
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB1071
V
CBO
40
50
20
40
5
4
8
V
2SB1071A
Collector-emitter voltage
(Base open)
2SB1071
V
CEO
V
2SB1071A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
25
W
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB1071
V
CEO
I
C
=
10 mA, I
B
=
0
20
40
V
2SB1071A
Collector-base cutoff
current (Emitter open)
2SB1071
I
CBO
V
CB
=
40 V, I
E
=
0
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
2 A, I
B
=
0.1 A
I
C
=
2 A, I
B
=
0.1 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
2 A, I
B1
=
0.2 A, I
B2
=
0.2 A
V
CC
=
20 V
50
50
50
μ
A
2SB1071A
Emitter-base cutoff current (Collector open)
I
EBO
μ
A
Forward current transfer ratio
h
FE1
h
FE2 *
45
60
260
Collector-emitter saturation voltage
V
CE(sat)
0.5
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
V
Transition frequency
150
MHz
Turn-on time
t
on
0.3
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.4
Fall time
0.1
Rank
R
Q
P
h
FE2
60 to 120
90 to 180
130 to 260
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1071A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| 2SB1071AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1071AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1071AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1071P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | SOT-186 |
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