參數(shù)資料
型號(hào): 2SB1079-E
元件分類: 功率晶體管
英文描述: 20 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝: TO-3P, 3 PIN
文件頁數(shù): 6/7頁
文件大?。?/td> 145K
代理商: 2SB1079-E
2SB1079
4
Saturation Voltage vs.
Collector Current
Ta = 25
°C
Pulse
–10
–3
–1.0
–0.3
–0.1
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
–0.03
–0.01
–0.3
Collector current IC (A)
–1.0
–3
–10
–30
VBE(sat)
VCE(sat)
IC/IB = 200
500
200
Switching Time vs. Collector Current
Switching
time
t
(
s)
10
3
1.0
0.3
0.1
0.03
0.01
0.3
1.0
3
Collector current IC (A)
10
30
tf
ton
tstg
VCC = –30V
IC = 500/B1 = –500/B2
Ta = 25
°C
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
0.1
1.0
10
100 (s)
(ms)
0.1
1.0
10
100
Time t
Thermal
resistance
θ
j-c
(
°C/W)
TC = 25°C
1 Shot
0.1–100 s
0.1–100 ms
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