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參數(shù)資料
| 型號： | 2SB1094 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 2SB1094 |
Data Sheet D16186EJ2V0DS
2
2SB1094
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB =
7.0 V, IC = 0
10
A
DC current gain
hFE1**
VCE =
5.0 V, IC = 50 mA
20
DC current gain
hFE2**
VCE =
5.0 V, IC = 0.5 A
40
100
200
Collector saturation voltage
VCE(sat)**
IC =
2.0 A, IB = 0.2 A
0.5
1.5
V
Base saturation voltage
VBE(sat)**
IC =
2.0 A, IB = 0.2 A
1.1
2.0
V
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
70
pF
Gain bandwidth product
fT
VCE =
5.0 V, IC = 0.1 A
20
MHz
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
T
o
ta
lP
o
w
e
r
D
issi
p
a
ti
on
P
T
(W
)
Case Temperature TC (
°C)
IC
D
e
ra
tin
g
d
T
(
%
)
Ambient Temperature Ta (
°C)
Col
le
c
tor
Cur
rent
IC
(
A
)
Pulse Width PW (s)
Collector to Emitter Voltage VCE (V)
Tc = 25
°C
(with infinite heatsink )
With infinite heatsink (Tc = 25
°C)
Without heatsink
Tr
ans
ient
Ther
m
a
l
Res
is
tan
c
e
R
th
(j
-c
)
(°
C/
W)
2-mm thick
aluminum
silicon grease
co ting
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1094K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1096 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB1097 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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