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參數(shù)資料
| 型號： | 2SB1110B |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SB1110B |
2SB1109, 2SB1110
3
Base to emitter voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–0.2
0
–0.6
–0.4
–1.0
–0.8
–2
–5
–10
–20
–50
–100
–1
T
a
=
75
°C
25
–25
VCE = –5 V
5
10
20
50
100
200
500
Collector current IC (mA)
DC
current
transfer
ratio
h
FE
–1
–2
–5
–10
–20
–50 –100
DC Current Transfer Ratio vs.
Collector Current
VCE = –5 V
Ta = 75
°C
25
–25
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Collector current IC (mA)
–1
–2
–5
–10
–20
–50 –100
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE
(sat)
(V)
Saturation Voltage vs. Collector Current
VBE (sat)
VCE (sat)
lC = 10 lB
25
75
TC =
–25
°C
TC = –25°C
5
10
20
50
100
200
500
Collector current IC (mA)
Gain
bandwidth
product
f
T
(MHz)
–0.5 –1.0
–2
–5
–10
–20
–50
Gain Gandwidth Product vs.
Collector Current
VCE = –10 V
0.5
1.0
2
5
10
20
50
Collector to base voltage VCB (V)
Collector
output
capacitance
C
ob
(pF)
–1
–2
–5
–10
–20
–50 –100
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
IE = 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1110C | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SB1109D | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1109B | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1114ZM | 2 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SB1114ZL | 2 A, 20 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1110C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1110D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1114 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1114-T1-AZ(ZK) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1114-T1-AZ-ZL | 制造商:Renesas Electronics Corporation 功能描述: |
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