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| 型號(hào)： | 2SB1116-L |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 2SB1116-L |
1998
Document No. D16195EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low VCE(sat)
VCE(sat) =
0.20 V TYP. (IC = 1.0 A, IB = 50 mA)
High PT in small dimension with general-purpose
PT = 0.75 W, VCEO =
50/60 V, IC(DC) = 1.0 A
Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Ratings
Parameter
Symbol
2SB1116 2SB1116A
Unit
Collector to base voltage
VCBO
60
80
V
Collector to emitter voltage
VCEO
50
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(pulse)*
2.0
A
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
2SB1116, 1116A
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =
6.0 V, IC = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 100 mA
135
600/400
DC current gain
hFE2 **
VCE =
2.0 V, IC = 1.0 A
81
DC base voltage
VBE **
VCE =
2.0 V, IC = 50 mA
600
650
700
mV
Collector saturation voltage
VCE(sat) **
IC =
1.0 A, IB = 50 mA
0.20
0.3
V
Base saturation voltage
VBE(sat) **
IC =
1.0 A, IB = 50 mA
0.9
1.2
V
Output capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
25
pF
Gain bandwidth product
fT
VCE =
2.0 V, IC = 100 mA
70
120
MHz
Turn-on time
ton
0.07
s
Storage temperature
tstg
0.70
s
Fall time
tf
VCC =
10 V, IC = 100 mA
IB1 =
IB2 = 10 mA,
VBE(off) = 2 to 3 V
0.07
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%
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| 2SB1116 | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB1116A-K | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB1116A-L-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB1116-K-AZ | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB1116A-U-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1116-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1116L-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB1116L-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB1116L-X-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB1116U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
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