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參數(shù)資料
| 型號(hào)： | 2SB1127-R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SB1127-R |
2SB1127
No.2452-1/4
Applications
Flash, power supplies, relay drivers, lamp drivers.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--25
V
Collector-to-Emitter Voltage
VCEO
--20
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--5
A
Collector Current (Pulse)
ICP
--8
A
Base Current
IB
--0.5
A
Collector Dissipation
PC
1W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--20V, IE=0
--500
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--500
nA
DC Current Gain
hFE1VCE=--2V, IC=--500mA
100*
400*
hFE2VCE=--2V, IC=--4A
60
* : The 2SB1127 is classified by 500mA hFE as follows :
Continued on next page.
Ordering number : ENN2452A
32505TN (PC)/13004TN (KT)/92098HA (KT)/4157TA, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SB1127
PNP Epitaxial Planar Silicon Transistor
Flash, High-Current Switching
Applications
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1127-R | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB1127 | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB1131-S | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1131-R | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1131 | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1127S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 |
| 2SB1127T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 |
| 2SB1130AM | 制造商:ROHM 制造商全稱:Rohm 功能描述:Epitaxial Planar PNP Silicon Transistor |
| 2SB1130M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | SIP |
| 2SB1131 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Strobe,High-Current Switching Applications |
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