參數(shù)資料
型號(hào): 2SB1132L-R-AB3-T
廠商: 友順科技股份有限公司
英文描述: MEDIUM POWER TRANSISTOR
中文描述: 中功率晶體管
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 67K
代理商: 2SB1132L-R-AB3-T
2SB1132
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R208-016,B
T Y PICAL CHARACT ERIS T ICS (Cont.)
0 -0.2
-0.5 -1
-2
-0.05
Collector to Emitter Voltage, V
CE
(V)
Safe Operation Area
C
-0.01
-5 -10 -20
-50
-0.1
-0.2
0.001 0.01
0.1
1
10
1
0.1
Time, t(s)
Transient Thermal Resistance
T
100
100
1000
10
1000
-1
20
Emitter Current, I
B
(mA)
Gain Bandwidth Product
vs. Emitter Current
T
T
(
50
-2
-5
-20
-50
-10
100
200
-100
Ta=25 C
V
CE
= -5V
-0.5
10
Collector to Base Voltage, V
CB
(V)
Collector Output Capacitance
vs.Collector-Base Voltage
C
20
-1
-2
-10
-20
-5
50
100
f=1MHz
I
E
=0A
Ta=25 C
-0.5
-1
-2
-5
P=0s
PW10m*
Ta=25 C
*Single pulse
Ta=25 C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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