參數(shù)資料
型號: 2SB1132L-X-TN3-R
廠商: 友順科技股份有限公司
英文描述: MEDIUM POWER TRANSISTOR
中文描述: 中功率晶體管
文件頁數(shù): 3/4頁
文件大?。?/td> 67K
代理商: 2SB1132L-X-TN3-R
2SB1132
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R208-016,B
T Y PICAL CHARACT ERIS T ICS
Grounded Emitter Propagation
0
-0.2
Base to Emitter Voltage, V
BE
(V)
-500
-1
Characteristics
C -200
-1
-2
-5 -10 -20
Collector Current, Ic(mA)
200
50
DC Current Gain vs. Collector Current (
)
D
F
100
-0.4 -0.6 -0.8
-1.6
-1.4
-1.2
-1.0
-2
-5
-10
V
CE
=-6V
Ta=100
Ta=25
Ta= -55
0
-500
0
Collector to Emitter Voltage, V
CE
(V)
Grounded Emitter Output
Characteristics
C
-100
-0.4
-0.8
-1.6
-2.0
-1.2
-200
-300
-400
-2.0
I
B
=0mA
Ta=25
-2.5
-1.5
-1.0
-0.5
-3.0
-3.5
-4.0
-4.5
-5.0
-50-100-200-500-1000
500
1000
Ta=25
Vc
E
= -3V
Vc
E
= -1V
-1
-2
-5 -10 -20
Collector Current :Ic(mA)
200
50
DC Current Gain vs.Collector Current (
)
D
F
100
-50-100-200-500-1000
500
1000
Vc
E
= -3V
Ta=100
Ta=25
Ta= -55
-1 -2
-5 -10-20
Collector Current, Ic(mA)
-0.05
-0.01
Collector-emitter Saturation Voltage vs.
Collector Current
-1Ta=25
I
C
/I
B
=10
C
C
(
-0.02
-50-100-200-500-1000
-0.1
-0.2
-2000
-0.5
-1
-1.0
0
Base Current, I
B
(mA)
Collector Emitter Saturation Voltage vs.
Base Current
C
C
(
-0.2
-2
-5
-20
-50
-10
-0.4
-0.6
-0.8
-100
Ta=25
I
C
= -500mA
I
C
= -300mA
-20
-50
-100
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