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參數(shù)資料
| 型號： | 2SB1132T100P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB1132T100P |
2SB1132 / 2SA1515S / 2SB1237
Transistors
Rev.B
3/4
Electrical characteristics curves
Fig.1 Grounded emitter
propagation characteristics
0
-1
-2
-5
-20
-200
-500
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
-10
-50
-100
VCE
=
6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=100 C
25 C
55 C
0
100
400
500
0.4
0.8
1.2
1.6
300
2.0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
IB
=0mA
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Ta
=25 C
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current(
Ι)
1
50
100
1000
2
5 10 20 50 100 200 500
200
500
1000
DC
CURRENT
GAIN
:
h
FE
Ta
=25 C
1V
VCE
= 3V
50
100
1000
200
500
1 2
5 10 20 50 100 200 5001000
VCE
= 3V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current(
ΙΙ)
Ta
=100 C
25 C
55 C
1 2
5 10 20 50 100 200 500 10002000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat
)(V)
COLLECTOR CURRENT : IC
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
1
0.5
0.2
0.1
0.05
0.02
0.01
Ta
=25 C
IC/IB
=10
1
2
5
10
20
50 100
0.2
0
0.4
0.6
0.8
1.0
COLLECTOR
TO
EMITTER
VOLTAGE
:
V
CE
(V)
BASE CURRENT : IB
(mA)
Fig.6 Collector-emitter saturation
voltage vs. base current
lC
= 500mA
lC
= 300mA
Ta
=25 C
20
50
100
200
1
2
5
10 20
50 100
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.7 Gain bandwidth product
vs. emitter current
Ta
=25 C
VCE
= 5V
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs.collector-base voltage
0.5
1
2
5
10
20
10
20
50
100
Ta
=25 C
f
=1MHz
IE
=0A
0
0.01
0.02
0.05
0.2
2
5
0.2 0.5
1 2
5 10 20 50
0.1
0.5
1
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operation area
(2SB1132)
Ta
=25 C
Single pulse
DC
P
w=
100ms
P
w =
10ms
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1132T100Q | 功能描述:兩極晶體管 - BJT PNP 32V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1132T100R | 功能描述:兩極晶體管 - BJT PNP 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1132T113Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132T200Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER TRANSISTOR |
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