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參數(shù)資料
| 型號(hào)： | 2SB1150-AZ |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | 2SB1150-AZ |
Power Transistors
2
2SB0943
VBE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
ton, tstg, tf IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(4)
(3)
(2)
Ambient temperature T
a
(C)
Collector
power
dissipation
P
C
(W
)
010
8
26
4
0
–6
–5
–4
–3
–2
–1
T
C=25C
–80mA
–60mA
–40mA
–30mA
–16mA
–20mA
–12mA
–8mA
–4mA
I
B=–100mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=20
25C
T
C=100C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=20
T
C=–100C
25C
–25C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0
–3.2
– 0.8
–2.4
–1.6
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10
(–I
B1=IB2)
V
CC=–50V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
1ms
10ms
t=0.5ms
I
CP
I
C
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1150-M-AZ | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 2SB1150-L-AZ | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 2SB1150-K | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 2SB1150-L-AZ | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 2SB1150-M | 3 A, 70 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1150-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB1150-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1150K | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SB1150L | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SB1150M | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 3A I(C) | TO-126VAR |
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