參數(shù)資料
型號: 2SB1151L-T60-T
廠商: 友順科技股份有限公司
英文描述: LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
中文描述: 低集電極飽和電壓大電流
文件頁數(shù): 3/4頁
文件大?。?/td> 122K
代理商: 2SB1151L-T60-T
2SB1151
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R204-022,A
3
T Y PICAL CHARACT ERIS T ICS
25
20
15
10
5
0
0
50
100
150
200
250
P
D
- Ta
T
C
=Ta
INFINTE HEAT SINK
Ambient Temperature, T
a
(
)
P
D
160
140
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
Case Temperature, T
C
(
)
I
C
T
(
d
T
- T
C
S/bLmted
DsspaionLmte
Safe Oerating Area
C
C
A
Collector-Emitter Voltage, V
CE
V
-10
-5
-3
-1
-0.5
-0.3
-0.1
-1
-3
-5
-10
-30 -50
-100
I
C
(Pulse)MAX.
I
C
(DC)MAX.
2ms
10ms
200ms
DsspaionLmted
SbLmted
* SINGLE NONREPETIVE
PULSED T
a
=25
CURVES MUST BE DERATED
LINERLY WITH INCREASE
IN TEMPERATURE
V
C
V
CEO (SUS)
Reverse Bias Safe Operating Area
C
C
A
Collector-Emitter Voltage, V
CE
V
-10
-8
-6
-4
-2
0
-20
-40
-60
-80
-100
C
C
A
Collector-Emitter Voltage, V
CE
V
-10
-8
-6
-4
0
-2
-0.4
-0.8
-1.2
-1.6
-2.0
I
C
- V
CE
I
B
=20A
I
B
=-=-100mA
I
B
I
B
=-80mA
I
B
=-60mA
I
B
=-40mA
I
B
=-30mA
I
B
=-20mA
I
B
=-10mA
I
B
=0mA
h
FE
- I
C
D
F
1K
500
300
100
50
30
10
5
3
1
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
V
CE
=-2V
V
CE
=-1V
Collector Current, I
C
(A)
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