參數(shù)資料
型號: 2SB1156P
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 20 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, TOP-3F-A1, SC-92, FULL PACK-3
文件頁數(shù): 2/4頁
文件大小: 250K
代理商: 2SB1156P
2SB1156
2
SJD00044BED
VCE(sat) IC
VBE(sat) IC
hFE IC
PC Ta
IC VCE
VCE(sat) IC
fT IC
ton , tstg , tf IC
Safe operation area
0
40
80
120
160
200
0
150
25
125
50
100
75
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)Without heat sink
(PC=3W)
(1)
(3)
(2)
0
4
8
12
20
16
0
12
2
10
4
8
6
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
TC=25C
IB=–300mA
–20mA
–40mA
–60mA
–80mA
–200mA
–140mA
–100mA
0.1
0.01
0.1
1
10
1
10
(1) IC/IB=10
(2) IC/IB=20
TC=25 C
(1)
(2)
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.1
0.01
0.1
1
10
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=10
TC=100C
25C
–25C
0.01
0.1
1
10
100
0.1
1
10
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
IC/IB=10
TC=–25C
100C
25C
0.1
10
1
10
100
1 000
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=–2V
TC=100C
25C
–25C
0.01
0.1
1
10
0.1
1
10
100
1 000
Collector current I
C (A)
Transition
frequency
f
T
(MHz)
VCE=–10V
f=10MHz
TC=25C
0.01
10
1
0.1
0
8
2
6
4
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–50V
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
t=10ms
t=1ms
ICP
IC
Non repetitive pulse
TC=25C
DC
This product complies with the RoHS Directive (EU 2002/95/EC).
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