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參數(shù)資料
| 型號： | 2SB1156PQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TOP3F-A, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SB1156PQ |
Power Transistors
2
2SB1156
PC Ta
IC VCE
VCE(sta) IC
VCE(sat) IC
VBE(sat) IC
hFE IC
fT IC
ton, tstg, tf IC
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
200
160
120
80
40
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3W)
(1)
(3)
(2)
Ambient temperature T
a
(C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–20
–16
–12
–8
–4
T
C=25C
I
B=–300mA
–20mA
–40mA
–60mA
–80mA
–200mA
–140mA
–100mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.1
–30
–10
–1
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
(1) I
C/IB=10
(2) I
C/IB=20
T
C=25C
(1)
(2)
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.1
–30
–10
–1
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
T
C=–25C
100C
25C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
– 0.1
–30
–10
–1
– 0.3
–3
1
3
10
30
100
300
1000
V
CE=–2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=–10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
0
–8
–2
–6
–4
–7
–1
–5
–3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10
(–I
B1=IB2)
V
CC=–50V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
10ms
t=1ms
I
CP
I
C
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
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