參數(shù)資料
型號: 2SB1176
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type
中文描述: 5 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 94K
代理商: 2SB1176
2SB1176
2
SJD00052AED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
t
on
,
t
stg
,
t
f
I
C
Safe operation area
0
0
160
40
120
80
5
15
10
20
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
(1)
(2)
C
C
Ambient temperature T
a
(
°
C)
0
2
6
4
8
7
5
3
1
0
10
2
4
8
6
C
C
Collector-emitter voltage V
CE
(V)
I
B
=–120mA
–100mA
–80mA
–60mA
–40mA
–30mA
–20mA
–10mA
–3mA
T
C
=25C
0.01
0.01
0.1
1
10
100
0.1
1
10
I
C
/I
B
=20
25C
T
C
=100C
–25C
C
C
Collector current I
C
(A)
0.01
0.01
0.1
1
10
100
0.1
1
10
B
B
Collector current I
C
(A)
I
C
/I
B
=20
T
C
=–25C
25C
100C
0.01
0.1
1
10
1
10
10
2
10
4
10
3
F
F
Collector current I
C
(A)
V
CE
=–2V
T
C
=100C
25C
–25C
0.01
0.1
1
10
1
10
10
2
10
4
10
3
T
T
Collector current I
C
(A)
V
CE
=–10V
f=10MHz
T
C
=25C
0.1
1
10
100
1
10
10
2
10
4
10
3
C
o
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
3.2
0.8
Collector current I
C
(A)
2.4
1.6
0.01
0.1
1
10
100
T
o
s
f
μ
s
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25C
0.01
1
0.1
1
10
100
10
100
1
000
Non repetitive pulse
T
C
=25C
t=10ms
t=300ms
t=1ms
I
CP
I
C
C
C
Collector-emitter voltage V
CE
(V)
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