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參數(shù)資料
| 型號： | 2SB1179Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 242K |
| 代理商： | 2SB1179Q |
Power Transistors
1
Publication date: February 2003
SJD00055AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1179
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SB1179A
80
Base-emitter voltage
VBE
VCE
= 3 V, I
C
= 3 A
2.5
V
Collector-base cutoff
2SB1179
ICBO
VCB
= 60 V, I
E
= 0
200
A
current (Emitter open)
2SB1179A
VCB
= 80 V, I
E
= 0
200
Collector-emitter cutoff
2SB1179
ICEO
VCE
= 40 V, I
B
= 0
500
A
current (Base open)
2SB1179A
VCE
= 40 V, I
B
= 0
500
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
2mA
Forward current transfer ratio
hFE1
VCE
= 3 V, I
C
= 0.5 A
1 000
hFE2 *
VCE
= 3 V, I
C
= 3 A
2 000
10 000
Collector-emitter saturation voltage
VCE(sat)
IC
= 3 A, I
B
= 12 mA
2V
IC
= 5 A, I
B
= 20 mA
4
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 3 A, IB1 = 12 mA, IB2 = 12 mA
0.3
s
Storage time
tstg
VCC
= 50 V
2.0
s
Fall time
tf
0.5
s
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity
High-speed switching
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1179
VCBO
60
V
(Emitter open)
2SB1179A
80
Collector-emitter voltage 2SB1179
VCEO
60
V
(Base open)
2SB1179A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
7.0±0.3
3.5±0.2
0 to 0.15
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0 to 0.15
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
Rank
Q
P
hFE2
2 000 to 5 000 4 000 to 10 000
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1179R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1180 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type darlington |
| 2SB1180A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type darlington |
| 2SB1180AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
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