參數(shù)資料
型號(hào): 2SB1180P
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 8 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 252K
代理商: 2SB1180P
2SB1180, 2SB1180A
2
SJD00056AED
VCE(sat) IC
VBE(sat) IC
PC Ta
IC VCE
VCE(sat) IC
hFE IC
Cob VCB
Safe operation area
0
160
40
120
80
5
15
10
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
(1)
(2)
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
2
6
4
8
0
5
1
2
4
3
IB=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
TC=25C
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0.1
1
10
100
0.1
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
IC/IB=500
TC=100C
–25C
25C
0.1
1
10
100
1
10
(1) IC/IB=250
(2) IC/IB=500
(3) IC/IB=1000
TC=25 C
(1)
(2)
(3)
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.1
1
10
1
100
0.1
10
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
IC/IB=500
TC=–25C
25C
100C
0.1
1
10
1
100
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
(1)
(2)
(3)
(1)IC/IB=250
(2)IC/IB=500
(3)IC/IB=1000
TC=25C
0.1
1
10
102
105
104
103
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=–3V
TC=100C
25C
–25C
0.1
1
10
100
1
10
102
103
104
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
Non repetitive pulse
TC=25C
t=10ms
t=300ms
t=1ms
ICP
2SB1180A
2SB1180
IC
This product complies with the RoHS Directive (EU 2002/95/EC).
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