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參數(shù)資料
| 型號： | 2SB1181TL/P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 89K |
| 代理商： | 2SB1181TL/P |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.B
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Min.
80
5
82
2SB1260, 2SB1181
2SB1241
2SB1181
100
25
1
390
0.4
VIC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 60V
VEB
= 4V
VCE
= 3V, IC= 0.1A
IC/IB
= 500mA/ 50mA
VCE
= 10V, IE=50mA, f=100MHz
VCB
= 10V, IE=0A, f=1MHz
V
A
120
390
V
MHz
fT
pF
Typ.
Max.
Unit
Conditions
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
2500
1000
PQR
hFE
2SB1260
TL
QR
2SB1241
PQR
2SB1181
TV2
T100
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
Fig.1
Grounded emitter propagation
characteristics
0
0.1
1
100
1000
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0.8
1.2
1.6
10
0.2 0.4
1.0
1.4
0.6
Ta
=25
°C
VCE
= 5V
Fig.2
Grounded emitter output
characteristics
0
0.2
0.8
1.0
0.4
0.8
1.2
1.6
0.4
0.6
2.0
0.2
0.6
1.0
1.4
1.8
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
0.05mA
IB
=0mA
0.1mA
0.15mA
0.2mA
0.25mA
0.3mA
0.35mA
0.4mA
0.45mA
Fig.3
DC current gain vs.
collector current
1 2
5 10 20 50 100 200 500
2000
COLLECTOR CURRENT : IC (mA)
10
DC
CURRENT
GAIN
:
h
FE
1000
20
50
100
200
500
1000
VCE
= 3V
1V
Ta
=25°C
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參數(shù)描述 |
|---|---|
| 2SB1181TLQ | 功能描述:兩極晶體管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1181TLR | 功能描述:兩極晶體管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1182 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP PLASTIC ENCAPSULATE TRANSISTORS |
| 2SB1182D | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SB1182G-X-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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