參數(shù)資料
型號(hào)： 2SB1188-E-AB3-R
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 小信號(hào)晶體管
英文描述： MEDIUM POWER LOW VOLTAGE TRANSISTOR
中文描述： 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-89, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 62K
代理商： 2SB1188-E-AB3-R
2SB1188
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R208-041,A
2 of 4
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
T
J
T
STG
RATINGS
-40
-30
-5
-7
-3
-0.6
0.5
+150
-40 ~ +150
UNIT
V
V
V
A
A
A
W
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
DC Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
Ic=-2A,I
B
=-0.2A
V
BE(SAT)
Ic=-2A,I
B
=-0.2A
f
T
V
CE
=-5V,Ic=-0.1A
Cob
V
CB
=-10V,I
E
=0,f=1MHz
TEST CONDITIONS
V
CB
=-30V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-2V,Ic=-20mA
V
CE
=-2V,Ic=-1A
MIN
30
100
TYP
200
150
-0.3
-1.0
80
45
MAX
-1000
-1000
UNIT
nA
nA
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: P
W
<300
μ
s, Duty Cycle<2%
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
Q
P
E
100 ~ 200
160 ~ 320
200 ~ 400
相關(guān)PDF資料
PDF描述
2SB1188L-E-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-P-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-Q-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-x-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188-P-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
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