參數(shù)資料
型號: 2SB1188L-E-AB3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: MEDIUM POWER LOW VOLTAGE TRANSISTOR
中文描述: 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 4/4頁
文件大小: 62K
代理商: 2SB1188L-E-AB3-R
2SB1188
T Y PICAL CHARACT ERICS (c ont.)
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R208-041,A
4 of 4
Fig.7 DC current gain
-Collector current Ic (mA)
-Collector current, Ic (mA)
Fig.8 Saturation Voltage
D
F
101
102
103
100
-
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
100
101
102
103
104
100
101
102
103
104
100
101
102
103
104
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料
PDF描述
2SB1188L-P-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-Q-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-x-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188-P-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188-Q-AB3-R MEDIUM POWER LOW VOLTAGE TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1188L-P-AB3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-Q-AB3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188L-X-AB3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188P 制造商:ROHM 制造商全稱:Rohm 功能描述:MEDIUM POWER TRANSISTOR(-32V, -2A)
2SB1188-P 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors