參數(shù)資料
型號(hào): 2SB1197-R-TP
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號(hào)晶體管
英文描述: 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 177K
代理商: 2SB1197-R-TP
PNP Silicon
Epitaxial Transistors
Features
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
E
B
C
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
-0.8
A
PD
Total Device Dissipation
0.2
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-32
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50uAdc,IE=0)
-40
V
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50uAdc,IC=0)
-5.0
V
ICBO
Collector-Base Cutoff Current
(VCB=-20Vdc, IE=0)
-0.5
Adc
IEBO
Emitter-Base Cutoff Current
(VEB=-4.0Vdc, IC=0)
-0.5
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=-100mAdc, VCE=-3.0Vdc)
82
390
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
-0.5
Vdc
fT
Transition Frequency
(VCE=-5Vdc,IC=-50mAdc,f=100MHZ)
50
MHZ
CLASSIFICATION OF
hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
AHP
AHQ
AHR
2SB1197-P
2SB1197-Q
2SB1197-R
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Small Package
Mounting:any position
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
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