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參數(shù)資料
| 型號(hào)： | 2SB1197 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Silicon Epitaxial Transistors |
| 中文描述： | 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMALL PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 2SB1197 |
2SB1197
2SB1197-P
2SB1197-Q
2SB1197-R
PNP Silicon
Epitaxial Transistors
Features
Small Package
Mounting:any
ROHS
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
omp
onents
20736 Marilla
Street Chatsworth
M C C
Revision:
2
2007/0
3
/
01
1 of 2
TM
Micro Commercial Components
www.
mc c semi
.c om
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
A
B
C
D
E
F
G
H
J
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
K
position
Compliant
E
B
C
Maximum Ratings @ T
a
= 25
Symbol
(unless otherwise noted)
Parameter
Value
Unit
I
C
Collector Current
-0.8
A
P
D
Total Device Dissipation
0.2
W
T
J
Junction Temperature
150
T
STG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc,I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-50uAdc,I
E
=0)
Collector-Base Breakdown Voltage
(I
E
=-50uAdc,I
C
=0)
Collector-Base Cutoff Current
(V
CB
=-20Vdc, I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
ON CHARACTERISTICS
h
FE
(I
C
=-100mAdc, V
CE
=-3.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
f
T
(V
CE
=-5Vdc,I
C
=-50mAdc,f=100MHZ)
CLASSIFICATION OF
h
FE
Rank
P
Range
82-180
AHP
Min
Max
Units
V(
BR
)CEO
-32
V
V(
BR
)CBO
-40
V
V(
BR
)EBO
-5.0
V
I
CBO
-0.5
μ
Adc
I
EBO
-0.5
uAdc
DC Current Gain
82
390
V
CE(sat)
-0.5
Vdc
Transition Frequency
50
MHZ
Q
R
120-270
AHQ
180-390
AHR
Marking
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1197-P | PNP Silicon Epitaxial Transistors |
| 2SB1197-Q | PNP Silicon Epitaxial Transistors |
| 2SB1197-R | PNP Silicon Epitaxial Transistors |
| 2SB1207 | Silicon PNP epitaxial planer type(For low-voltage output amplification) |
| 2SB1209 | Silicon PNP triple diffusion planer type(For low-frequency amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1197_07 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP General Purpose Transistors |
| 2SB1197_0712 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SB1197_10 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Epitaxial Planar Transistor |
| 2SB1197K | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1197K_08 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Frequency Transistor (-32V, -0.8A) |
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