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參數(shù)資料
| 型號： | 2SB1255P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, TOP-3F-A1, SC-92, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 2SB1255P |
Power Transistors
1
Publication date: March 2003
SJD00064BED
2SB1255
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to 2SD1895
■ Features
Optimum for 90 W HiFi output
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder
Dip
(3.5)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
160
V
Collector-emitter voltage (Base open)
VCEO
140
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
8A
Peak collector current
ICP
15
A
Collector power dissipation
PC
100
W
Ta = 25°C3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Internal Connection
B
C
E
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 30 mA, IB = 0
140
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 160 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 140 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
A
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 1 A
2 000
hFE2 *
VCE
= 5 V, I
C
= 7 A
5 000
30 000
Collector-emitter saturation voltage
VCE(sat)
IC = 7 A, IB = 7 mA
2.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 7 A, IB = 7 mA
3.0
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 7 A, I
B1
= 7 mA, I
B2
= 7 mA
1.0
s
Storage time
tstg
VCC = 50 V
1.5
s
Fall time
tf
1.2
s
Rank
Q
S
P
hFE2
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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